Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Interface potential changes and Schottky barriers
Abstract By investigating local potential changes at the Si(111)/Al interface, we find restrictions on the use of “canonical” Schottky-barrier heights. It is demonstrated that the “metallic” behavior of the metal-induced gap states is insufficient to completely screen out stronglocal interface potential effects on Schottky-barrier heights.
Interface potential changes and Schottky barriers
Abstract By investigating local potential changes at the Si(111)/Al interface, we find restrictions on the use of “canonical” Schottky-barrier heights. It is demonstrated that the “metallic” behavior of the metal-induced gap states is insufficient to completely screen out stronglocal interface potential effects on Schottky-barrier heights.
Interface potential changes and Schottky barriers
Zhang, S. B. (Autor:in) / Cohen, Marvin L. (Autor:in) / Louie, Steven G. (Autor:in)
01.01.1990
3 pages
Aufsatz/Kapitel (Buch)
Elektronische Ressource
Englisch
Engineered Schottky barriers on n-In0.35Ga0.65As
| British Library Online Contents | 2001
Properties of Metal-Polyaniline Schottky Barriers
| British Library Online Contents | 1999
Metal-Semiconductor Interfaces and Schottky Barriers
| Springer Verlag | 1985
Schottky barriers: An effective work function model
| Springer Verlag | 1990
Theory of the formation of Schottky barriers
| British Library Online Contents | 1993