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Interface potential changes and Schottky barriers

Zhang, S. B. / Cohen, Marvin L. / Louie, Steven G.

Abstract By investigating local potential changes at the Si(111)/Al interface, we find restrictions on the use of “canonical” Schottky-barrier heights. It is demonstrated that the “metallic” behavior of the metal-induced gap states is insufficient to completely screen out stronglocal interface potential effects on Schottky-barrier heights.

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Interface potential changes and Schottky barriers

Zhang, S. B. / Cohen, Marvin L. / Louie, Steven G.

Abstract By investigating local potential changes at the Si(111)/Al interface, we find restrictions on the use of “canonical” Schottky-barrier heights. It is demonstrated that the “metallic” behavior of the metal-induced gap states is insufficient to completely screen out stronglocal interface potential effects on Schottky-barrier heights.

Interface potential changes and Schottky barriers

Zhang, S. B. / Cohen, Marvin L. / Louie, Steven G.

Abstract By investigating local potential changes at the Si(111)/Al interface, we find restrictions on the use of “canonical” Schottky-barrier heights. It is demonstrated that the “metallic” behavior of the metal-induced gap states is insufficient to completely screen out stronglocal interface potential effects on Schottky-barrier heights.

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Order at Subito €

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Title:

Interface potential changes and Schottky barriers

Contributors:

Zhang, S. B. (author) / Cohen, Marvin L. (author) / Louie, Steven G. (author)

Published in:

Electronic Structure of Metal-Semiconductor Contacts ; 188-190

Perspectives in Condensed Matter Physics ; 4

Publication date:

1990-01-01

Size:

3 pages

ISBN:

978-94-010-6780-5 , 978-94-009-0657-0

ISSN:

DOI:

https://doi.org/10.1007/978-94-009-0657-0_25

Type of media:

Article/Chapter (Book)

Type of material:

Electronic Resource

Language:

English

Keywords:

Physics , Physics, general , Surfaces and Interfaces, Thin Films , Physical Chemistry , Electrical Engineering , Condensed Matter Physics

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