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Electronic structure of a metal-semiconductor interface

Louie, Steven G. / Cohen, Marvin L.

Abstract The electronic structure of a jellium-Si interface is calculated using a jellium density corresponding to Al and self-consistent Si pseudopotentials. Local densities of states and charge densities are used to study states near the interface. At the Si surface, a high density of extra states is found in the energy range of the Si fundamental gap. These states are bulklike in jellium and decay into Si with a high concentration of charge in the dangling-bond free-surface-like Si state. Truly localized interface states are also found but at lower energies. The calculated barrier height is in excellent agreement with recent experimental results.

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Electronic structure of a metal-semiconductor interface

Louie, Steven G. / Cohen, Marvin L.

Abstract The electronic structure of a jellium-Si interface is calculated using a jellium density corresponding to Al and self-consistent Si pseudopotentials. Local densities of states and charge densities are used to study states near the interface. At the Si surface, a high density of extra states is found in the energy range of the Si fundamental gap. These states are bulklike in jellium and decay into Si with a high concentration of charge in the dangling-bond free-surface-like Si state. Truly localized interface states are also found but at lower energies. The calculated barrier height is in excellent agreement with recent experimental results.

Electronic structure of a metal-semiconductor interface

Louie, Steven G. / Cohen, Marvin L.

Abstract The electronic structure of a jellium-Si interface is calculated using a jellium density corresponding to Al and self-consistent Si pseudopotentials. Local densities of states and charge densities are used to study states near the interface. At the Si surface, a high density of extra states is found in the energy range of the Si fundamental gap. These states are bulklike in jellium and decay into Si with a high concentration of charge in the dangling-bond free-surface-like Si state. Truly localized interface states are also found but at lower energies. The calculated barrier height is in excellent agreement with recent experimental results.

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Titel:

Electronic structure of a metal-semiconductor interface

Beteiligte:

Louie, Steven G. (Autor:in) / Cohen, Marvin L. (Autor:in)

Erschienen in:

Electronic Structure of Metal-Semiconductor Contacts ; 116-124

Perspectives in Condensed Matter Physics ; 4

Erscheinungsdatum:

01.01.1990

Format / Umfang:

9 pages

ISBN:

978-94-010-6780-5 , 978-94-009-0657-0

ISSN:

DOI:

https://doi.org/10.1007/978-94-009-0657-0_13

Medientyp:

Aufsatz/Kapitel (Buch)

Format:

Elektronische Ressource

Sprache:

Englisch

Schlagwörter:

Charge Density , Fermi Level , Barrier Height , Total Charge Density , Valence Charge Density Physics , Physics, general , Surfaces and Interfaces, Thin Films , Physical Chemistry , Electrical Engineering , Condensed Matter Physics

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