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Unraveling the Interfacial Carrier Behavior in PtSe2–MoSe2 Heterostructures: Insights from Combined Pump‐Probe Spectroscopy and Scanning Tunneling Microscopy
https://orcid.org/0009-0004-6687-2378
https://orcid.org/0000-0003-2922-3139
https://orcid.org/0000-0001-6380-7731
https://orcid.org/0000-0002-6656-2669
AbstractInterfacial carrier behavior is vital for modifying the optoelectronic performance of 2D materials with atomical thickness, yet understanding exciton dynamics within hetero‐phase heterojunctions at the nanoscale remains elusive. Here, carrier dynamics at the interface in molecular beam epitaxy grown 1T PtSe2–1H MoSe2 heterostructures are revealed by ultrafast pump‐probe spectroscopy, and the corresponding mechanisms are studied by combining scanning tunneling microscopy/spectroscopy (STM/STS). The difference in exciton lifetimes and signal intensities in the heterostructures at the energies larger and narrower than the bandgap of MoSe2 demonstrates both electrons and holes transfer at the interface of PtSe2 and MoSe2 monolayers. Such bipolar transfer is interpreted through both the type‐I (lateral) and type‐II (vertical) band alignments revealed by STS measurements across the heterojunctions interface. Besides, it also shows that the band alignment modification of in‐plane heterojunctions by a specific conductive substrate can fairly alter the exciton dynamics at the interface. This work provides a comprehensive insight into the carrier dynamics in PtSe2–MoSe2 heterostructures with high spatial and temporal resolutions and may be beneficial for their design in optoelectronic devices.
Unraveling the Interfacial Carrier Behavior in PtSe2–MoSe2 Heterostructures: Insights from Combined Pump‐Probe Spectroscopy and Scanning Tunneling Microscopy
https://orcid.org/0009-0004-6687-2378
https://orcid.org/0000-0003-2922-3139
https://orcid.org/0000-0001-6380-7731
https://orcid.org/0000-0002-6656-2669
AbstractInterfacial carrier behavior is vital for modifying the optoelectronic performance of 2D materials with atomical thickness, yet understanding exciton dynamics within hetero‐phase heterojunctions at the nanoscale remains elusive. Here, carrier dynamics at the interface in molecular beam epitaxy grown 1T PtSe2–1H MoSe2 heterostructures are revealed by ultrafast pump‐probe spectroscopy, and the corresponding mechanisms are studied by combining scanning tunneling microscopy/spectroscopy (STM/STS). The difference in exciton lifetimes and signal intensities in the heterostructures at the energies larger and narrower than the bandgap of MoSe2 demonstrates both electrons and holes transfer at the interface of PtSe2 and MoSe2 monolayers. Such bipolar transfer is interpreted through both the type‐I (lateral) and type‐II (vertical) band alignments revealed by STS measurements across the heterojunctions interface. Besides, it also shows that the band alignment modification of in‐plane heterojunctions by a specific conductive substrate can fairly alter the exciton dynamics at the interface. This work provides a comprehensive insight into the carrier dynamics in PtSe2–MoSe2 heterostructures with high spatial and temporal resolutions and may be beneficial for their design in optoelectronic devices.
Unraveling the Interfacial Carrier Behavior in PtSe2–MoSe2 Heterostructures: Insights from Combined Pump‐Probe Spectroscopy and Scanning Tunneling Microscopy
https://orcid.org/0009-0004-6687-2378
https://orcid.org/0000-0003-2922-3139
https://orcid.org/0000-0001-6380-7731
https://orcid.org/0000-0002-6656-2669
AbstractInterfacial carrier behavior is vital for modifying the optoelectronic performance of 2D materials with atomical thickness, yet understanding exciton dynamics within hetero‐phase heterojunctions at the nanoscale remains elusive. Here, carrier dynamics at the interface in molecular beam epitaxy grown 1T PtSe2–1H MoSe2 heterostructures are revealed by ultrafast pump‐probe spectroscopy, and the corresponding mechanisms are studied by combining scanning tunneling microscopy/spectroscopy (STM/STS). The difference in exciton lifetimes and signal intensities in the heterostructures at the energies larger and narrower than the bandgap of MoSe2 demonstrates both electrons and holes transfer at the interface of PtSe2 and MoSe2 monolayers. Such bipolar transfer is interpreted through both the type‐I (lateral) and type‐II (vertical) band alignments revealed by STS measurements across the heterojunctions interface. Besides, it also shows that the band alignment modification of in‐plane heterojunctions by a specific conductive substrate can fairly alter the exciton dynamics at the interface. This work provides a comprehensive insight into the carrier dynamics in PtSe2–MoSe2 heterostructures with high spatial and temporal resolutions and may be beneficial for their design in optoelectronic devices.
Unraveling the Interfacial Carrier Behavior in PtSe2–MoSe2 Heterostructures: Insights from Combined Pump‐Probe Spectroscopy and Scanning Tunneling Microscopy
Advanced Science
Zhang, Weili (Autor:in) / Chen, Hu (Autor:in) / Peng, Jiangbo (Autor:in) / Pan, Xiaoguang (Autor:in) / Bai, Hangxin (Autor:in) / Jing, Fangli (Autor:in) / Qiu, Hailong (Autor:in) / Hu, Zhanggui (Autor:in) / Wu, Yicheng (Autor:in) / Liu, Hongjun (Autor:in)
07.03.2025
Aufsatz (Zeitschrift)
Elektronische Ressource
Englisch
Cross-Sectional Scanning Tunneling Microscopy of Semiconductor Heterostructures
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Scanning Tunneling Microscopy and Spectroscopy
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Abnormal Seebeck Effect in Vertically Stacked 2D/2D PtSe2/PtSe2 Homostructure
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Abnormal Seebeck Effect in Vertically Stacked 2D/2D PtSe2/PtSe2 Homostructure
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Theory of Scanning Tunneling Microscopy and Spectroscopy
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