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Nanoscale Resist‐Free Patterning of Halogenated Zeolitic Imidazolate Frameworks by Extreme UV Lithography
https://orcid.org/0000-0003-2911-4717
https://orcid.org/0000-0003-3178-5480
https://orcid.org/0000-0003-4751-3877
AbstractAdvancements in patterning techniques for metal–organic frameworks (MOFs) are crucial for their integration into microelectronics. However, achieving precise nanoscale control of MOF structures remains challenging. In this work, a resist‐free method for patterning MOFs is demonstrated using extreme ultraviolet (EUV) lithography with a resolution of 40 nm. The role of halogen atoms in the linker and the effect of humidity are analyzed through in situ and near‐ambient pressure synchrotron X‐ray photoelectron spectroscopy. In addition to facilitating the integration of MOFs, the results offer valuable insights for developing the highly sought‐after positive‐tone EUV photoresists.
Nanoscale Resist‐Free Patterning of Halogenated Zeolitic Imidazolate Frameworks by Extreme UV Lithography
https://orcid.org/0000-0003-2911-4717
https://orcid.org/0000-0003-3178-5480
https://orcid.org/0000-0003-4751-3877
AbstractAdvancements in patterning techniques for metal–organic frameworks (MOFs) are crucial for their integration into microelectronics. However, achieving precise nanoscale control of MOF structures remains challenging. In this work, a resist‐free method for patterning MOFs is demonstrated using extreme ultraviolet (EUV) lithography with a resolution of 40 nm. The role of halogen atoms in the linker and the effect of humidity are analyzed through in situ and near‐ambient pressure synchrotron X‐ray photoelectron spectroscopy. In addition to facilitating the integration of MOFs, the results offer valuable insights for developing the highly sought‐after positive‐tone EUV photoresists.
Nanoscale Resist‐Free Patterning of Halogenated Zeolitic Imidazolate Frameworks by Extreme UV Lithography
https://orcid.org/0000-0003-2911-4717
https://orcid.org/0000-0003-3178-5480
https://orcid.org/0000-0003-4751-3877
AbstractAdvancements in patterning techniques for metal–organic frameworks (MOFs) are crucial for their integration into microelectronics. However, achieving precise nanoscale control of MOF structures remains challenging. In this work, a resist‐free method for patterning MOFs is demonstrated using extreme ultraviolet (EUV) lithography with a resolution of 40 nm. The role of halogen atoms in the linker and the effect of humidity are analyzed through in situ and near‐ambient pressure synchrotron X‐ray photoelectron spectroscopy. In addition to facilitating the integration of MOFs, the results offer valuable insights for developing the highly sought‐after positive‐tone EUV photoresists.
Nanoscale Resist‐Free Patterning of Halogenated Zeolitic Imidazolate Frameworks by Extreme UV Lithography
Advanced Science
Li, Weina (Autor:in) / Ma, Tianlei (Autor:in) / Tang, Pengyi (Autor:in) / Luo, Yunhong (Autor:in) / Zhang, Hui (Autor:in) / Zhao, Jun (Autor:in) / Ameloot, Rob (Autor:in) / Tu, Min (Autor:in)
05.03.2025
Aufsatz (Zeitschrift)
Elektronische Ressource
Englisch
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Synthesis of zeolitic imidazolate framework nanocrystals
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| British Library Online Contents | 2014