Black Phosphorus Quantum Dots with Tunable Memory Properties and Multilevel Resistive Switching Characteristics: Fid-Bau Portal

Black Phosphorus Quantum Dots with Tunable Memory Properties and Multilevel Resistive Switching Characteristics

Han, Su‐Ting / Hu, Liang / Wang, Xiandi / Zhou, Ye / Zeng, Yu‐Jia / Ruan, Shuangchen / Pan, Caofeng / Peng, Zhengchun

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Black Phosphorus Quantum Dots with Tunable Memory Properties and Multilevel Resistive Switching Characteristics

Han, Su‐Ting / Hu, Liang / Wang, Xiandi / Zhou, Ye / Zeng, Yu‐Jia / Ruan, Shuangchen / Pan, Caofeng / Peng, Zhengchun

Black Phosphorus Quantum Dots with Tunable Memory Properties and Multilevel Resistive Switching Characteristics

Han, Su‐Ting / Hu, Liang / Wang, Xiandi / Zhou, Ye / Zeng, Yu‐Jia / Ruan, Shuangchen / Pan, Caofeng / Peng, Zhengchun

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Titel:

Black Phosphorus Quantum Dots with Tunable Memory Properties and Multilevel Resistive Switching Characteristics

Beteiligte:

Han, Su‐Ting (Autor:in) / Hu, Liang (Autor:in) / Wang, Xiandi (Autor:in) / Zhou, Ye (Autor:in) / Zeng, Yu‐Jia (Autor:in) / Ruan, Shuangchen (Autor:in) / Pan, Caofeng (Autor:in) / Peng, Zhengchun (Autor:in)

Erschienen in:

Advanced Science ; 4

Erscheinungsdatum:

01.08.2017

Format / Umfang:

7 pages

ISSN:

2198-3844

DOI:

https://doi.org/10.1002/advs.201600435

Medientyp:

Aufsatz (Zeitschrift)

Format:

Elektronische Ressource

Sprache:

Englisch

Schlagwörter:

tunable memory characteristics , flexible memory , multilevel datastorage , resistive switching , black phosphorus quantum dots

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