A platform for research: civil engineering, architecture and urbanism
VPE Growth of Highly-Uniform III-V Compound Semiconductor Epitaxial Film by Computer Application
VPE Growth of Highly-Uniform III-V Compound Semiconductor Epitaxial Film by Computer Application
VPE Growth of Highly-Uniform III-V Compound Semiconductor Epitaxial Film by Computer Application
Kaji, M. (author) / Yoshida, H. (author) / Takemoto, K. (author) / Miura, Y. (author) / Doyama, M.
2nd International conference on computer applications to materials and molecular science and engineering, Computer aided innovation of new materials ; 1992 ; Yokohama; Japan
1993-01-01
4 pages
In 2 pts. Also known as CAMSE 92
Conference paper
English
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Epitaxial techniques for compound semiconductor growth: from LPE to mOVPE
British Library Online Contents | 2000
|Step bunching during the epitaxial growth of a generic binary-compound thin film
British Library Online Contents | 2010
|"Epitaxial Grain Growth in Thin Film"
British Library Online Contents | 1993
|British Library Online Contents | 1997
|Epitaxial Growth of Copper Film by MOCVD
British Library Conference Proceedings | 2016
|