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    Epitaxial growth and characterization of GaS~xSe~1~-~x layered compound semiconductor by molecular beam epitaxy

    New search for: Budiman, M.
    New search for: Okamoto, T.
    New search for: Yamada, A.
    New search for: Konagai, M.

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    Epitaxial growth and characterization of GaS~xSe~1~-~x layered compound semiconductor by molecular beam epitaxy

    New search for: Budiman, M.
    New search for: Okamoto, T.
    New search for: Yamada, A.
    New search for: Konagai, M.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Epitaxial growth and characterization of GaS~xSe~1~-~x layered compound semiconductor by molecular beam epitaxy

    New search for: Budiman, M.
    New search for: Okamoto, T.
    New search for: Yamada, A.
    New search for: Konagai, M.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Document information
    Title:

    Epitaxial growth and characterization of GaS~xSe~1~-~x layered compound semiconductor by molecular beam epitaxy

    Contributors:

    Budiman, M. (author) / Okamoto, T. (author) / Yamada, A. (author) / Konagai, M. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 117/118 ; 518-522

    Publication date:

    1997-01-01

    Size:

    5 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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