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Deposition of silicon carbide thin films by pulsed excimer laser ablation technique in the 25-700C deposition temperature range [2403-13]
Deposition of silicon carbide thin films by pulsed excimer laser ablation technique in the 25-700C deposition temperature range [2403-13]
Deposition of silicon carbide thin films by pulsed excimer laser ablation technique in the 25-700C deposition temperature range [2403-13]
El Khakani, M. A. (author) / Gat, E. (author) / Beaudoin, Y. (author) / Chaker, M. (author) / Dobowski, J. J. / SPIE
Conference, Laser-induced thin film processing ; 1995 ; San Jose; CA
1995-01-01
11 pages
Conference paper
English
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