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    Porous n-silicon produced by photoelectrochemical etching

    New search for: Levy-Clement, C.
    New search for: Lagoubi, A.
    New search for: Ballutaud, D.
    New search for: Ozanam, F.

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    Porous n-silicon produced by photoelectrochemical etching

    New search for: Levy-Clement, C.
    New search for: Lagoubi, A.
    New search for: Ballutaud, D.
    New search for: Ozanam, F.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Porous n-silicon produced by photoelectrochemical etching

    New search for: Levy-Clement, C.
    New search for: Lagoubi, A.
    New search for: Ballutaud, D.
    New search for: Ozanam, F.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

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    Document information
    Title:

    Porous n-silicon produced by photoelectrochemical etching

    Contributors:

    Levy-Clement, C. (author) / Lagoubi, A. (author) / Ballutaud, D. (author) / Ozanam, F. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 65//66 ; 408

    Publication date:

    1993-01-01

    Size:

    408 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    Unknown

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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