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    Structural properties of porous In0.08Ga0.92N synthesized using photoelectrochemical etching

    New search for: Abud, S. H.
    New search for: Hassan, Z.
    New search for: Yam, F. K.

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    Structural properties of porous In0.08Ga0.92N synthesized using photoelectrochemical etching

    New search for: Abud, S. H.
    New search for: Hassan, Z.
    New search for: Yam, F. K.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Structural properties of porous In0.08Ga0.92N synthesized using photoelectrochemical etching

    New search for: Abud, S. H.
    New search for: Hassan, Z.
    New search for: Yam, F. K.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
    Similar titles

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    Document information
    Title:

    Structural properties of porous In0.08Ga0.92N synthesized using photoelectrochemical etching

    Contributors:

    Abud, S. H. (author) / Hassan, Z. (author) / Yam, F. K. (author)

    Published in:

    MATERIALS LETTERS ; 107 ; 367-369

    Publication date:

    2013-01-01

    Size:

    3 pages

    ISSN:

    0167-577X

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.1105 / 530

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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