A platform for research: civil engineering, architecture and urbanism
Behaviour of adsorbed oxygen during rapid electron-beam heating of Ta/Ti bilayers on single-crystal silicon
Behaviour of adsorbed oxygen during rapid electron-beam heating of Ta/Ti bilayers on single-crystal silicon
Behaviour of adsorbed oxygen during rapid electron-beam heating of Ta/Ti bilayers on single-crystal silicon
Mahmood, F. (author) / Ahmed, H. (author) / Suleman, M. (author)
JOURNAL OF MATERIALS SCIENCE ; 28 ; 3155
1993-01-01
3155 pages
Article (Journal)
Unknown
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Radiation Effects on Single-crystal Silicon of Low Energy Electron Beam
British Library Online Contents | 2011
|Oxygen transportation during Czochralski silicon crystal growth
British Library Online Contents | 2000
|The origin of electron beam patterning in silver/amorphous chalcogenide bilayers
British Library Online Contents | 2015
|Rapid Thermal Processing and the Control of Oxygen Precipitation Behaviour in Silicon Wafers
British Library Online Contents | 2008
|British Library Online Contents | 2005
|