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    Investigation of stability of GaAs metal/electron/semiconductor field effect transistor gate contacts by high resolution transmission electron microscopy analysis

    New search for: Labat, N.
    New search for: Danto, Y.
    New search for: Plano, B.
    New search for: Chambon, M.

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    Investigation of stability of GaAs metal/electron/semiconductor field effect transistor gate contacts by high resolution transmission electron microscopy analysis

    New search for: Labat, N.
    New search for: Danto, Y.
    New search for: Plano, B.
    New search for: Chambon, M.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Investigation of stability of GaAs metal/electron/semiconductor field effect transistor gate contacts by high resolution transmission electron microscopy analysis

    New search for: Labat, N.
    New search for: Danto, Y.
    New search for: Plano, B.
    New search for: Chambon, M.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Document information
    Title:

    Investigation of stability of GaAs metal/electron/semiconductor field effect transistor gate contacts by high resolution transmission electron microscopy analysis

    Contributors:

    Labat, N. (author) / Danto, Y. (author) / Plano, B. (author) / Chambon, M. (author)

    Published in:

    MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 20 ; 33

    Publication date:

    1993-01-01

    Size:

    33 pages

    ISSN:

    0921-5107

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    Unknown

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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