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Investigation of stability of GaAs metal/electron/semiconductor field effect transistor gate contacts by high resolution transmission electron microscopy analysis
Investigation of stability of GaAs metal/electron/semiconductor field effect transistor gate contacts by high resolution transmission electron microscopy analysis
Investigation of stability of GaAs metal/electron/semiconductor field effect transistor gate contacts by high resolution transmission electron microscopy analysis
Labat, N. (Autor:in) / Danto, Y. (Autor:in) / Plano, B. (Autor:in) / Chambon, M. (Autor:in)
01.01.1993
33 pages
Aufsatz (Zeitschrift)
Unbekannt
DDC:
620.11
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