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    Characterization of the crystallographic defect structure in selected-area epitaxial growth of GaInAs on InP by metallo-organic chemical vapour deposition

    New search for: Mallard, R. E.
    New search for: Thrush, E. J.
    New search for: Gibbon, M. A.
    New search for: Booker, G. R.

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    Characterization of the crystallographic defect structure in selected-area epitaxial growth of GaInAs on InP by metallo-organic chemical vapour deposition

    New search for: Mallard, R. E.
    New search for: Thrush, E. J.
    New search for: Gibbon, M. A.
    New search for: Booker, G. R.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Characterization of the crystallographic defect structure in selected-area epitaxial growth of GaInAs on InP by metallo-organic chemical vapour deposition

    New search for: Mallard, R. E.
    New search for: Thrush, E. J.
    New search for: Gibbon, M. A.
    New search for: Booker, G. R.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
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    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Characterization of the crystallographic defect structure in selected-area epitaxial growth of GaInAs on InP by metallo-organic chemical vapour deposition

    Contributors:

    Mallard, R. E. (author) / Thrush, E. J. (author) / Gibbon, M. A. (author) / Booker, G. R. (author)

    Published in:

    MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 20 ; 48

    Publication date:

    1993-01-01

    Size:

    48 pages

    ISSN:

    0921-5107

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    Unknown

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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