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Gallium vacancy related defects in silicon doped GaAs grown at low temperatures

McQuaid, S. A. / Pritchard, R. E. / Newman, R. C. / O'Hagan, S.

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Gallium vacancy related defects in silicon doped GaAs grown at low temperatures

McQuaid, S. A. / Pritchard, R. E. / Newman, R. C. / O'Hagan, S.

Gallium vacancy related defects in silicon doped GaAs grown at low temperatures

McQuaid, S. A. / Pritchard, R. E. / Newman, R. C. / O'Hagan, S.

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Check availability in my library

Order at Subito €

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Document information

Title:

Gallium vacancy related defects in silicon doped GaAs grown at low temperatures

Contributors:

McQuaid, S. A. (author) / Pritchard, R. E. (author) / Newman, R. C. (author) / O'Hagan, S. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 22 ; 23

Publication date:

1993-01-01

Size:

23 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

Unknown

Classification:

DDC: 620.11

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Peaker, A.R. / Evans-Freeman, J.H. / Kan, P.Y.Y. et al. | British Library Online Contents | 2000

Various Configurations of Silicon Related Defects GaAs

Okada, Y. / Fujii, K. | British Library Online Contents | 1993

Peaker, A. R. / Coppinger, F. / Efeoglu, H. et al. | British Library Online Contents | 1997