A platform for research: civil engineering, architecture and urbanism
Interfacial barrier characteristics for LT-GaAs on low doped GaAs layers
Interfacial barrier characteristics for LT-GaAs on low doped GaAs layers
Interfacial barrier characteristics for LT-GaAs on low doped GaAs layers
Lipka, K. M. (author) / Splingart, B. (author) / Zhang, X. (author) / Poese, M. (author)
1993-01-01
55 pages
Article (Journal)
Unknown
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
GaAs planar doped barrier diodes
British Library Online Contents | 2001
|Interfacial Microstructure of In~xGa~1~-~xAs/GaAs Strained Layers
British Library Online Contents | 1995
|Electrical characteristics of carbon-doped GaAs
British Library Online Contents | 1993
|Annealing study of InGaP/GaAs heterojunction bipolar transistor and carbon-doped p+GaAs base layers
British Library Online Contents | 2001
|Interfacial differences in enhanced schottky barrier height Au/n-GaAs diodes deposited at 77K
British Library Online Contents | 2007
|