Annealing study of InGaP/GaAs heterojunction bipolar transistor and carbon-doped p+GaAs base layers: Fid-Bau Portal

Annealing study of InGaP/GaAs heterojunction bipolar transistor and carbon-doped p+GaAs base layers

Moriarty, G. R. / Murtagh, M. / Cherkaoui, K. / Gouez, G. / Kelly, P. V. / Crean, G. M. / Bland, S. W.

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Annealing study of InGaP/GaAs heterojunction bipolar transistor and carbon-doped p+GaAs base layers

Moriarty, G. R. / Murtagh, M. / Cherkaoui, K. / Gouez, G. / Kelly, P. V. / Crean, G. M. / Bland, S. W.

Annealing study of InGaP/GaAs heterojunction bipolar transistor and carbon-doped p+GaAs base layers

Moriarty, G. R. / Murtagh, M. / Cherkaoui, K. / Gouez, G. / Kelly, P. V. / Crean, G. M. / Bland, S. W.

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Document information

Title:

Annealing study of InGaP/GaAs heterojunction bipolar transistor and carbon-doped p+GaAs base layers

Contributors:

Moriarty, G. R. (author) / Murtagh, M. (author) / Cherkaoui, K. (author) / Gouez, G. (author) / Kelly, P. V. (author) / Crean, G. M. (author) / Bland, S. W. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 80 ; 284 - 288

Publication date:

2001-01-01

Size:

5 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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