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    Investigation of -SiAION Formation by High Temperature X-Ray Diffraction

    New search for: Ashkin, A.
    New search for: Ashkin, D.
    New search for: Babushkin, O.
    New search for: Hoffmann, M. J.
    New search for: Becher, P. F.
    New search for: Petzow, G.

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    Investigation of -SiAION Formation by High Temperature X-Ray Diffraction

    New search for: Ashkin, A.
    New search for: Ashkin, D.
    New search for: Babushkin, O.
    New search for: Hoffmann, M. J.
    New search for: Becher, P. F.
    New search for: Petzow, G.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Investigation of -SiAION Formation by High Temperature X-Ray Diffraction

    New search for: Ashkin, A.
    New search for: Ashkin, D.
    New search for: Babushkin, O.
    New search for: Hoffmann, M. J.
    New search for: Becher, P. F.
    New search for: Petzow, G.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

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    Document information
    Title:

    Investigation of -SiAION Formation by High Temperature X-Ray Diffraction

    Contributors:

    Ashkin, A. (author) / Ashkin, D. (author) / Babushkin, O. (author) / Hoffmann, M. J. / Becher, P. F. / Petzow, G.

    Published in:

    Silicon Nitride 93 ; 373

    KEY ENGINEERING MATERIALS

    Publication date:

    1994-01-01

    Size:

    373 pages

    ISSN:

    1013-9826

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    Unknown

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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