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    The Structure Quality of Single-Domain MBE GaAs Layers Grown on Hydrogen Passivated Si (001) Substrates

    New search for: Antipov, V. G.
    New search for: Kutt, R. N.
    New search for: Nikishin, S. A.
    New search for: Ruvimov, S. S.

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    The Structure Quality of Single-Domain MBE GaAs Layers Grown on Hydrogen Passivated Si (001) Substrates

    New search for: Antipov, V. G.
    New search for: Kutt, R. N.
    New search for: Nikishin, S. A.
    New search for: Ruvimov, S. S.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    The Structure Quality of Single-Domain MBE GaAs Layers Grown on Hydrogen Passivated Si (001) Substrates

    New search for: Antipov, V. G.
    New search for: Kutt, R. N.
    New search for: Nikishin, S. A.
    New search for: Ruvimov, S. S.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Check availability in my library
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    Document information
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    Document information
    Title:

    The Structure Quality of Single-Domain MBE GaAs Layers Grown on Hydrogen Passivated Si (001) Substrates

    Contributors:

    Antipov, V. G. (author) / Kutt, R. N. (author) / Nikishin, S. A. (author) / Ruvimov, S. S. (author)

    Published in:

    MATERIALS SCIENCE FORUM ; 1595

    Publication date:

    1993-01-01

    Size:

    1595 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    Unknown

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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