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A platform for research: civil engineering, architecture and urbanism
The Bound Exciton Model for Isoelectronic Centers in Silicon
The Bound Exciton Model for Isoelectronic Centers in Silicon
The Bound Exciton Model for Isoelectronic Centers in Silicon
Davies, G. (author) / Nazare, M. H. (author)
MATERIALS SCIENCE FORUM ; 105
1994-01-01
105 pages
Article (Journal)
Unknown
DDC:
620.11
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