Excitons Bound to Isoelectronic C~3~v-Defects B^4~8~0 (1.1068 eV) in Silicon: Fid-Bau Portal

Excitons Bound to Isoelectronic C~3~v-Defects B^4~8~0 (1.1068 eV) in Silicon

Kaminskii, A. S. / Lavrov, E. V.

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Excitons Bound to Isoelectronic C~3~v-Defects B^4~8~0 (1.1068 eV) in Silicon

Kaminskii, A. S. / Lavrov, E. V.

Excitons Bound to Isoelectronic C~3~v-Defects B^4~8~0 (1.1068 eV) in Silicon

Kaminskii, A. S. / Lavrov, E. V.

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Check availability in my library

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Document information

Title:

Excitons Bound to Isoelectronic C~3~v-Defects B^4~8~0 (1.1068 eV) in Silicon

Contributors:

Kaminskii, A. S. (author) / Lavrov, E. V. (author)

Published in:

MATERIALS SCIENCE FORUM ; 145-150

Publication date:

1995-01-01

Size:

6 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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