Behaviour of Boron After Implantation into Silicon-Schottky Diodes: A �-NMR Study on the Fermi-Level Dependence: Fid-Bau Portal

Behaviour of Boron After Implantation into Silicon-Schottky Diodes: A -NMR Study on the Fermi-Level Dependence

Frank, H.-P. / Diehl, E. / Ergezinger, K.-H. / Fischer, B.

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Behaviour of Boron After Implantation into Silicon-Schottky Diodes: A -NMR Study on the Fermi-Level Dependence

Frank, H.-P. / Diehl, E. / Ergezinger, K.-H. / Fischer, B.

Behaviour of Boron After Implantation into Silicon-Schottky Diodes: A -NMR Study on the Fermi-Level Dependence

Frank, H.-P. / Diehl, E. / Ergezinger, K.-H. / Fischer, B.

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Check availability in my library

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Document information

Title:

Behaviour of Boron After Implantation into Silicon-Schottky Diodes: A -NMR Study on the Fermi-Level Dependence

Contributors:

Frank, H.-P. (author) / Diehl, E. (author) / Ergezinger, K.-H. (author) / Fischer, B. (author)

Published in:

MATERIALS SCIENCE FORUM ; 135

Publication date:

1994-01-01

Size:

135 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

Unknown

Classification:

DDC: 620.11

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