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    Edge Termination of SiC Schottky Diodes with Guard Rings Formed by High Energy Boron Implantation

    New search for: Vassilevski, K. V.
    New search for: Horsfall, A. B.
    New search for: Johnson, C. M.
    New search for: Wright, N. G.

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    Edge Termination of SiC Schottky Diodes with Guard Rings Formed by High Energy Boron Implantation

    New search for: Vassilevski, K. V.
    New search for: Horsfall, A. B.
    New search for: Johnson, C. M.
    New search for: Wright, N. G.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Edge Termination of SiC Schottky Diodes with Guard Rings Formed by High Energy Boron Implantation

    New search for: Vassilevski, K. V.
    New search for: Horsfall, A. B.
    New search for: Johnson, C. M.
    New search for: Wright, N. G.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
    Similar titles

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    Document information
    Title:

    Edge Termination of SiC Schottky Diodes with Guard Rings Formed by High Energy Boron Implantation

    Contributors:

    Vassilevski, K. V. (author) / Horsfall, A. B. (author) / Johnson, C. M. (author) / Wright, N. G. (author)

    Published in:

    MATERIALS SCIENCE FORUM ; 457/460 ; 989-992

    Publication date:

    2004-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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