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    Strain Relaxation During Epitaxial Crystallization of Ge~xSi~1~-~x Alloy Layers Produced by Ion-Implantation

    New search for: Elliman, R. G.
    New search for: Wong, W. C.

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    Strain Relaxation During Epitaxial Crystallization of Ge~xSi~1~-~x Alloy Layers Produced by Ion-Implantation

    New search for: Elliman, R. G.
    New search for: Wong, W. C.

    Access

    Access via TIB
    Check availability in my library
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    Strain Relaxation During Epitaxial Crystallization of Ge~xSi~1~-~x Alloy Layers Produced by Ion-Implantation

    New search for: Elliman, R. G.
    New search for: Wong, W. C.

    Access

    Access via TIB
    Check availability in my library
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    Document information
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    Document information
    Title:

    Strain Relaxation During Epitaxial Crystallization of Ge~xSi~1~-~x Alloy Layers Produced by Ion-Implantation

    Contributors:

    Elliman, R. G. (author) / Wong, W. C. (author)

    Published in:

    MATERIALS SCIENCE FORUM ; 507

    Publication date:

    1994-01-01

    Size:

    507 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    Unknown

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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