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Enhanced disordering of GaAs/AlGaAs multiple quantum well by rapid thermal annealing using plasma enhanced chemical vapour deposited SiN capping layer grown at high RF power condition
Enhanced disordering of GaAs/AlGaAs multiple quantum well by rapid thermal annealing using plasma enhanced chemical vapour deposited SiN capping layer grown at high RF power condition
Enhanced disordering of GaAs/AlGaAs multiple quantum well by rapid thermal annealing using plasma enhanced chemical vapour deposited SiN capping layer grown at high RF power condition
Choi, W. J. (author) / Lee, J. I. (author) / Han, I. K. (author) / Kang, K. N. (author)
JOURNAL OF MATERIALS SCIENCE LETTERS ; 13 ; 326
1994-01-01
326 pages
Article (Journal)
Unknown
DDC:
620.11
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