Microstructures of GaN films deposited on (001) and (111) Si substrates using electron cyclotron resonance assisted-molecular beam epitaxy: Fid-Bau Portal

Microstructures of GaN films deposited on (001) and (111) Si substrates using electron cyclotron resonance assisted-molecular beam epitaxy

Basu, S. N. / Lei, T. / Moustakas, T. D.

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Microstructures of GaN films deposited on (001) and (111) Si substrates using electron cyclotron resonance assisted-molecular beam epitaxy

Basu, S. N. / Lei, T. / Moustakas, T. D.

Microstructures of GaN films deposited on (001) and (111) Si substrates using electron cyclotron resonance assisted-molecular beam epitaxy

Basu, S. N. / Lei, T. / Moustakas, T. D.

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Microstructures of GaN films deposited on (001) and (111) Si substrates using electron cyclotron resonance assisted-molecular beam epitaxy

Contributors:

Basu, S. N. (author) / Lei, T. (author) / Moustakas, T. D. (author)

Published in:

JOURNAL OF MATERIALS RESEARCH -PITTSBURGH- ; 9 ; 2370

Publication date:

1994-01-01

Size:

2370 pages

ISSN:

0884-2914

Type of media:

Article (Journal)

Type of material:

Language:

Unknown

Classification:

DDC: 620.11

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