Si1-x-yGexCy alloy growth by electron cyclotron resonance plasma-assisted Si molecular beam epitaxy: Fid-Bau Portal

Si1-x-yGexCy alloy growth by electron cyclotron resonance plasma-assisted Si molecular beam epitaxy

Baribeau, J. M. / Lockwood, D. J. / Balle, J. / Rolfe, S. J. / Sproule, G. I.

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Si1-x-yGexCy alloy growth by electron cyclotron resonance plasma-assisted Si molecular beam epitaxy

Baribeau, J. M. / Lockwood, D. J. / Balle, J. / Rolfe, S. J. / Sproule, G. I.

Si1-x-yGexCy alloy growth by electron cyclotron resonance plasma-assisted Si molecular beam epitaxy

Baribeau, J. M. / Lockwood, D. J. / Balle, J. / Rolfe, S. J. / Sproule, G. I.

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Check availability in my library

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Document information

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Document information

Title:

Si1-x-yGexCy alloy growth by electron cyclotron resonance plasma-assisted Si molecular beam epitaxy

Contributors:

Baribeau, J. M. (author) / Lockwood, D. J. (author) / Balle, J. (author) / Rolfe, S. J. (author) / Sproule, G. I. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 89 ; 296 - 302

Publication date:

2002-01-01

Size:

7 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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