GaInP/GaAs heterojunction bipolar transistors grown by low pressure metalorganic chemical vapour deposition for voltage-controlled oscillators and power amplifier microwave monolithic integrated circuits: Fid-Bau Portal

GaInP/GaAs heterojunction bipolar transistors grown by low pressure metalorganic chemical vapour deposition for voltage-controlled oscillators and power amplifier microwave monolithic integrated circuits

Di Forte-Poisson, M. A. / Brylinski, C. / Delage, S. L. / Blanck, H.

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Di Forte-Poisson, M. A. / Brylinski, C. / Delage, S. L. / Blanck, H.

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Contributors:

Di Forte-Poisson, M. A. (author) / Brylinski, C. (author) / Delage, S. L. (author) / Blanck, H. (author) / Fornari, R.

Published in:

2nd International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies ; 242

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 28

Publication date:

1994-01-01

Size:

242 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

Unknown

Classification:

DDC: 620.11

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