Hydrogen in carbon-doped GaAs base layer of GaInP/GaAs heterojunction bipolar transistors: Fid-Bau Portal

Hydrogen in carbon-doped GaAs base layer of GaInP/GaAs heterojunction bipolar transistors

Richter, E. / Kurpas, P. / Sato, M. / Trapp, M. / Zeimer, U. / Haehle, S. / Weyers, M.

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Hydrogen in carbon-doped GaAs base layer of GaInP/GaAs heterojunction bipolar transistors

Richter, E. / Kurpas, P. / Sato, M. / Trapp, M. / Zeimer, U. / Haehle, S. / Weyers, M.

Hydrogen in carbon-doped GaAs base layer of GaInP/GaAs heterojunction bipolar transistors

Richter, E. / Kurpas, P. / Sato, M. / Trapp, M. / Zeimer, U. / Haehle, S. / Weyers, M.

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Check availability in my library

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Title:

Hydrogen in carbon-doped GaAs base layer of GaInP/GaAs heterojunction bipolar transistors

Contributors:

Richter, E. (author) / Kurpas, P. (author) / Sato, M. (author) / Trapp, M. (author) / Zeimer, U. (author) / Haehle, S. (author) / Weyers, M. (author) / Jantz, W. / Baeumler, M.

Published in:

Solid-State Materials for Advanced Technology ; 337-340

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 44

Publication date:

1997-01-01

Size:

4 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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Current gain deterioration in carbon-doped AlGaAs/GaAs heterojunction bipolar transistors during high-temperature bias stress tests

Ishibashi, T. / Sugahara, H. / Ito, H. et al. | British Library Online Contents | 1994

GaInP/GaAs heterojunction bipolar transistors grown by low pressure metalorganic chemical vapour deposition for voltage-controlled oscillators and power amplifier microwave monolithic integrated circuits

Di Forte-Poisson, M. A. / Brylinski, C. / Delage, S. L. et al. | British Library Online Contents | 1994

Fully planar AlGaAs/GaAs heterojunction bipolar transistors using chemical beam epitaxy selective growth

Driad, R. / Duchenois, A. M. / Le Roux, G. et al. | British Library Online Contents | 1994