Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

    Quantitative investigation of interdiffusion effects in balanced-strain InGaAs(P)/InGaAsP heterostructures: constant x vs. constant y

    New search for: Camassel, J.
    New search for: Peyre, H.
    New search for: Glew, R. W.
    New search for: Fornani, R.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Quantitative investigation of interdiffusion effects in balanced-strain InGaAs(P)/InGaAsP heterostructures: constant x vs. constant y

    New search for: Camassel, J.
    New search for: Peyre, H.
    New search for: Glew, R. W.
    New search for: Fornani, R.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Quantitative investigation of interdiffusion effects in balanced-strain InGaAs(P)/InGaAsP heterostructures: constant x vs. constant y

    New search for: Camassel, J.
    New search for: Peyre, H.
    New search for: Glew, R. W.
    New search for: Fornani, R.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Quantitative investigation of interdiffusion effects in balanced-strain InGaAs(P)/InGaAsP heterostructures: constant x vs. constant y

    Contributors:

    Camassel, J. (author) / Peyre, H. (author) / Glew, R. W. (author) / Fornani, R.

    Published in:

    2nd International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies ; 353

    MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 28

    Publication date:

    1994-01-01

    Size:

    353 pages

    ISSN:

    0921-5107

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    Unknown

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

    Similar titles

    Be diffusion in InGaAs, InGaAsP epitaxial layers and across InGaAs/InGaAsP, InGaAs/InP heterointerfaces

    Koumetz, S. / Marcon, J. / Gautier, S. et al. | British Library Online Contents | 1999

    Interdiffusion in InGaAs/GaAs and InGaAs/GaAsP quantum wells

    Oster, A. / Bugge, F. / Gramlich, S. et al. | British Library Online Contents | 1997

    Chalcogen interdiffusion in PbSe/PbTe heterostructures

    Belyansky, M. P. / Gaskov, A. M. / Strelkov, A. V. | British Library Online Contents | 1992

    Electron beam induced current studies of strain balanced InGaAs/InGaAs multiquantum wells

    Tundo, S. / Mazzer, M. / Lazzarini, L. et al. | British Library Online Contents | 2003

    Vacancy controlled interdiffusion in III-V heterostructures

    Gillin, W. P. / Bradley, I. V. / Rao, S. S. et al. | British Library Online Contents | 1993

    Back to top