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Relaxation of strained InGaAs/GaAs layers under thermal processing

Lourenco, M. A. / Homewood, K. P. / Considine, L.

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Relaxation of strained InGaAs/GaAs layers under thermal processing

Lourenco, M. A. / Homewood, K. P. / Considine, L.

Relaxation of strained InGaAs/GaAs layers under thermal processing

Lourenco, M. A. / Homewood, K. P. / Considine, L.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Relaxation of strained InGaAs/GaAs layers under thermal processing

Contributors:

Lourenco, M. A. (author) / Homewood, K. P. (author) / Considine, L. (author) / Fornani, R.

Published in:

2nd International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies ; 507

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 28

Publication date:

1994-01-01

Size:

507 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

Unknown

Classification:

DDC: 620.11

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