A platform for research: civil engineering, architecture and urbanism
Selective MLE growth of GaAs and surface treatment for ideal static induction transistor (ISIT) application
Selective MLE growth of GaAs and surface treatment for ideal static induction transistor (ISIT) application
Selective MLE growth of GaAs and surface treatment for ideal static induction transistor (ISIT) application
Oyama, Y. (author) / Plotka, P. (author) / Nishizawa, J. (author)
APPLIED SURFACE SCIENCE ; 82/83 ; 41
1994-01-01
41 pages
Article (Journal)
Unknown
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Ideal static induction transistor implemented with molecular layer epitaxy
British Library Online Contents | 1994
|Device characteristics of NiPc static induction transistor
British Library Online Contents | 2001
|Silicon Carbide Static Induction Transistor with Implanted Buried Gate
British Library Online Contents | 2009
|Static induction transistor characteristics of organic copper phthalocyanine films
British Library Online Contents | 2001
|Electrical Characteristics of a Novel Gate Structure 4H-SiC Power Static Induction Transistor
British Library Online Contents | 1998
|