Electrical Characteristics of a Novel Gate Structure 4H-SiC Power Static Induction Transistor: Fid-Bau Portal

Electrical Characteristics of a Novel Gate Structure 4H-SiC Power Static Induction Transistor

Iwasaki, T. / Oono, T. / Asano, K. / Sugawara, Y. / Yatsuo, T.

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Electrical Characteristics of a Novel Gate Structure 4H-SiC Power Static Induction Transistor

Iwasaki, T. / Oono, T. / Asano, K. / Sugawara, Y. / Yatsuo, T.

Electrical Characteristics of a Novel Gate Structure 4H-SiC Power Static Induction Transistor

Iwasaki, T. / Oono, T. / Asano, K. / Sugawara, Y. / Yatsuo, T.

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Document information

Title:

Electrical Characteristics of a Novel Gate Structure 4H-SiC Power Static Induction Transistor

Contributors:

Iwasaki, T. (author) / Oono, T. (author) / Asano, K. (author) / Sugawara, Y. (author) / Yatsuo, T. (author)

Published in:

MATERIALS SCIENCE FORUM ; 264/268 ; 1085-1088

Publication date:

1998-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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