Raman Studies of Doped Poly-Si Thin Films Prepared by Pulsed Excimer Laser Annealing: Fid-Bau Portal

Raman Studies of Doped Poly-Si Thin Films Prepared by Pulsed Excimer Laser Annealing

Compaan, A. / Savage, M. E. / Jayamaha, U. / Azfar, T.

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Raman Studies of Doped Poly-Si Thin Films Prepared by Pulsed Excimer Laser Annealing

Compaan, A. / Savage, M. E. / Jayamaha, U. / Azfar, T.

Raman Studies of Doped Poly-Si Thin Films Prepared by Pulsed Excimer Laser Annealing

Compaan, A. / Savage, M. E. / Jayamaha, U. / Azfar, T.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Raman Studies of Doped Poly-Si Thin Films Prepared by Pulsed Excimer Laser Annealing

Contributors:

Compaan, A. (author) / Savage, M. E. (author) / Jayamaha, U. (author) / Azfar, T. (author) / Brieger, M. / Dittrich, H. / Klose, M. / Schock, H. W.

Published in:

Applications in Photovoltaics ; 197

MATERIALS SCIENCE FORUM

Publication date:

1995-01-01

Size:

197 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

Unknown

Classification:

DDC: 620.11

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