Raman Study of "Boson Peak" in Amorphous Silicon: Dependence on Hydrogen and Carbon Content: Fid-Bau Portal

Raman Study of "Boson Peak" in Amorphous Silicon: Dependence on Hydrogen and Carbon Content

Ivanda, M. / Hartmann, I. / Duschek, F. / Kiefer, W.

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Raman Study of "Boson Peak" in Amorphous Silicon: Dependence on Hydrogen and Carbon Content

Ivanda, M. / Hartmann, I. / Duschek, F. / Kiefer, W.

Raman Study of "Boson Peak" in Amorphous Silicon: Dependence on Hydrogen and Carbon Content

Ivanda, M. / Hartmann, I. / Duschek, F. / Kiefer, W.

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Title:

Raman Study of "Boson Peak" in Amorphous Silicon: Dependence on Hydrogen and Carbon Content

Contributors:

Ivanda, M. (author) / Hartmann, I. (author) / Duschek, F. (author) / Kiefer, W. (author) / Brieger, M. / Dittrich, H. / Klose, M. / Schock, H. W.

Published in:

Applications in Photovoltaics ; 243

MATERIALS SCIENCE FORUM

Publication date:

1995-01-01

Size:

243 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

Unknown

Classification:

DDC: 620.11

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