Defects in GaAs after Si indiffusion and annealing: a TEM and CL study: Fid-Bau Portal

Defects in GaAs after Si indiffusion and annealing: a TEM and CL study

Herzog, L. / Egger, U. / Breitenstein, O. / Hettwer, H.-G.

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Defects in GaAs after Si indiffusion and annealing: a TEM and CL study

Herzog, L. / Egger, U. / Breitenstein, O. / Hettwer, H.-G.

Defects in GaAs after Si indiffusion and annealing: a TEM and CL study

Herzog, L. / Egger, U. / Breitenstein, O. / Hettwer, H.-G.

Access

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Defects in GaAs after Si indiffusion and annealing: a TEM and CL study

Contributors:

Herzog, L. (author) / Egger, U. (author) / Breitenstein, O. (author) / Hettwer, H.-G. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 30 ; 43

Publication date:

1995-01-01

Size:

43 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

Unknown

Classification:

DDC: 620.11

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