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    Positron Mobility and Interface Defect Studies in Semi-Insulating GaAs Using the Lifetime Technique

    New search for: Shan, Y. Y.
    New search for: Ling, C. C.
    New search for: Au, H. L.
    New search for: Fung, S.
    New search for: He, Y.-J.
    New search for: Cao, B.-S.
    New search for: Jean, Y. C.

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    Positron Mobility and Interface Defect Studies in Semi-Insulating GaAs Using the Lifetime Technique

    New search for: Shan, Y. Y.
    New search for: Ling, C. C.
    New search for: Au, H. L.
    New search for: Fung, S.
    New search for: He, Y.-J.
    New search for: Cao, B.-S.
    New search for: Jean, Y. C.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Positron Mobility and Interface Defect Studies in Semi-Insulating GaAs Using the Lifetime Technique

    New search for: Shan, Y. Y.
    New search for: Ling, C. C.
    New search for: Au, H. L.
    New search for: Fung, S.
    New search for: He, Y.-J.
    New search for: Cao, B.-S.
    New search for: Jean, Y. C.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
    Title:

    Positron Mobility and Interface Defect Studies in Semi-Insulating GaAs Using the Lifetime Technique

    Contributors:

    Shan, Y. Y. (author) / Ling, C. C. (author) / Au, H. L. (author) / Fung, S. (author) / He, Y.-J. / Cao, B.-S. / Jean, Y. C.

    Published in:

    Positron Annihilation ICPA-10 ; 517

    MATERIALS SCIENCE FORUM

    Publication date:

    1995-01-01

    Size:

    517 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    Unknown

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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