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    Defect characterization of II-VI compound semiconductors using positron lifetime spectroscopy

    New search for: Tessaro, G.
    New search for: Mascher, P.
    New search for: Davies, G.
    New search for: Nazare, M. H.

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    Defect characterization of II-VI compound semiconductors using positron lifetime spectroscopy

    New search for: Tessaro, G.
    New search for: Mascher, P.
    New search for: Davies, G.
    New search for: Nazare, M. H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Defect characterization of II-VI compound semiconductors using positron lifetime spectroscopy

    New search for: Tessaro, G.
    New search for: Mascher, P.
    New search for: Davies, G.
    New search for: Nazare, M. H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

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    Document information
    Title:

    Defect characterization of II-VI compound semiconductors using positron lifetime spectroscopy

    Contributors:

    Tessaro, G. (author) / Mascher, P. (author) / Davies, G. / Nazare, M. H.

    Published in:

    Defects in Semiconductors ICDS-19 ; 1335-1340

    MATERIALS SCIENCE FORUM ; 258/263

    Publication date:

    1997-01-01

    Size:

    6 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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