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    Preparation of low density free-standing shape of SiC by pressure-pulsed chemical vapour infiltration

    New search for: Sugiyama, K.
    New search for: Norizuki, K.

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    Preparation of low density free-standing shape of SiC by pressure-pulsed chemical vapour infiltration

    New search for: Sugiyama, K.
    New search for: Norizuki, K.

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    Access via TIB
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    Preparation of low density free-standing shape of SiC by pressure-pulsed chemical vapour infiltration

    New search for: Sugiyama, K.
    New search for: Norizuki, K.

    Access

    Access via TIB
    Check availability in my library
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    Document information
    Title:

    Preparation of low density free-standing shape of SiC by pressure-pulsed chemical vapour infiltration

    Contributors:

    Sugiyama, K. (author) / Norizuki, K. (author)

    Published in:

    JOURNAL OF MATERIALS SCIENCE LETTERS ; 14 ; 1720-1722

    Publication date:

    1995-01-01

    Size:

    3 pages

    ISSN:

    0261-8028

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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