Native defects in gallium arsenide grown by molecular beam epitaxy and metallorganic chemical vapour deposition: effects of irradiation: Fid-Bau Portal

Native defects in gallium arsenide grown by molecular beam epitaxy and metallorganic chemical vapour deposition: effects of irradiation

Jorio, A. / Carlone, C. / Rowell, N. L. / Houdayer, A. / Parenteau, M.

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Native defects in gallium arsenide grown by molecular beam epitaxy and metallorganic chemical vapour deposition: effects of irradiation

Jorio, A. / Carlone, C. / Rowell, N. L. / Houdayer, A. / Parenteau, M.

Native defects in gallium arsenide grown by molecular beam epitaxy and metallorganic chemical vapour deposition: effects of irradiation

Jorio, A. / Carlone, C. / Rowell, N. L. / Houdayer, A. / Parenteau, M.

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Title:

Native defects in gallium arsenide grown by molecular beam epitaxy and metallorganic chemical vapour deposition: effects of irradiation

Contributors:

Jorio, A. (author) / Carlone, C. (author) / Rowell, N. L. (author) / Houdayer, A. (author) / Parenteau, M. (author) / Henini, M. / Szweda, R.

Published in:

Low Dimensional Structures and Devices ; 160-165

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 35

Publication date:

1995-01-01

Size:

6 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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