Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Native defects in gallium arsenide grown by molecular beam epitaxy and metallorganic chemical vapour deposition: effects of irradiation
Native defects in gallium arsenide grown by molecular beam epitaxy and metallorganic chemical vapour deposition: effects of irradiation
Native defects in gallium arsenide grown by molecular beam epitaxy and metallorganic chemical vapour deposition: effects of irradiation
Jorio, A. (Autor:in) / Carlone, C. (Autor:in) / Rowell, N. L. (Autor:in) / Houdayer, A. (Autor:in) / Parenteau, M. (Autor:in) / Henini, M. / Szweda, R.
01.01.1995
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Precipitates in AlGaN epilayers grown by metallorganic vapor phase epitaxy
British Library Online Contents | 2002
|Erbium related defects in gallium arsenide
British Library Online Contents | 1997
|British Library Online Contents | 1995
|Metallorganic chemical vapor deposition and characterization of TiO2 nanoparticles
British Library Online Contents | 2002
|Development of chemical beam epitaxy for the deposition of gallium nitride
British Library Online Contents | 1995
|