The study of GaAs/InGaAs �-doping resonant interband tunneling diode: Fid-Bau Portal

The study of GaAs/InGaAs -doping resonant interband tunneling diode

Yang, C. C. / Huang, K. C. / Su, Y. K. / Wang, R. L.

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The study of GaAs/InGaAs -doping resonant interband tunneling diode

Yang, C. C. / Huang, K. C. / Su, Y. K. / Wang, R. L.

The study of GaAs/InGaAs -doping resonant interband tunneling diode

Yang, C. C. / Huang, K. C. / Su, Y. K. / Wang, R. L.

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Title:

The study of GaAs/InGaAs -doping resonant interband tunneling diode

Contributors:

Yang, C. C. (author) / Huang, K. C. (author) / Su, Y. K. (author) / Wang, R. L. (author) / Henini, M. / Szweda, R.

Published in:

Low Dimensional Structures and Devices ; 259-262

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 35

Publication date:

1995-01-01

Size:

4 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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