Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric InGaAs/GaAs n-type �-doped quantum wells: Fid-Bau Portal

Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric InGaAs/GaAs n-type -doped quantum wells

Tabata, A. / Ceschin, A. M. / Quivy, A. A. / Levine, A. / Leite, J. R. / Enderlein, R. / Oliveira, J. B. B. / Laureto, E. / Goncalves, J. L.

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Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric InGaAs/GaAs n-type -doped quantum wells

Tabata, A. / Ceschin, A. M. / Quivy, A. A. / Levine, A. / Leite, J. R. / Enderlein, R. / Oliveira, J. B. B. / Laureto, E. / Goncalves, J. L.

Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric InGaAs/GaAs n-type -doped quantum wells

Tabata, A. / Ceschin, A. M. / Quivy, A. A. / Levine, A. / Leite, J. R. / Enderlein, R. / Oliveira, J. B. B. / Laureto, E. / Goncalves, J. L.

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Title:

Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric InGaAs/GaAs n-type -doped quantum wells

Contributors:

Tabata, A. (author) / Ceschin, A. M. (author) / Quivy, A. A. (author) / Levine, A. (author) / Leite, J. R. (author) / Enderlein, R. (author) / Oliveira, J. B. B. (author) / Laureto, E. (author) / Goncalves, J. L. (author) / Henini, M.

Published in:

Low Dimensional Structures and Devices ; 401-405

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 35

Publication date:

1995-01-01

Size:

5 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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