Doping dependence of intersubband transitions in Si~1~-~x Ge~x/Si multiple quantum wells: Fid-Bau Portal

Doping dependence of intersubband transitions in Si~1~-~x Ge~x/Si multiple quantum wells

Karunasiri, G. / Chua, S. J. / Park, J. S. / Wang, K. L.

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Doping dependence of intersubband transitions in Si~1~-~x Ge~x/Si multiple quantum wells

Karunasiri, G. / Chua, S. J. / Park, J. S. / Wang, K. L.

Doping dependence of intersubband transitions in Si~1~-~x Ge~x/Si multiple quantum wells

Karunasiri, G. / Chua, S. J. / Park, J. S. / Wang, K. L.

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Check availability in my library

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Document information

Title:

Doping dependence of intersubband transitions in Si~1~-~x Ge~x/Si multiple quantum wells

Contributors:

Karunasiri, G. (author) / Chua, S. J. (author) / Park, J. S. (author) / Wang, K. L. (author) / Henini, M. / Szweda, R.

Published in:

Low Dimensional Structures and Devices ; 463-466

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 35

Publication date:

1995-01-01

Size:

4 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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