Ion beam synthesis of aluminium nitride: characterisation of thin AIN layers formed in microelectronics aluminium: Fid-Bau Portal

Ion beam synthesis of aluminium nitride: characterisation of thin AIN layers formed in microelectronics aluminium

Calvo-Barrio, L. / Perez-Rodriguez, A. / Romano-Rodriguez, A. / Morante, J. R. / Montserrat, J.

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Ion beam synthesis of aluminium nitride: characterisation of thin AIN layers formed in microelectronics aluminium

Calvo-Barrio, L. / Perez-Rodriguez, A. / Romano-Rodriguez, A. / Morante, J. R. / Montserrat, J.

Ion beam synthesis of aluminium nitride: characterisation of thin AIN layers formed in microelectronics aluminium

Calvo-Barrio, L. / Perez-Rodriguez, A. / Romano-Rodriguez, A. / Morante, J. R. / Montserrat, J.

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Check availability in my library

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Document information

Title:

Ion beam synthesis of aluminium nitride: characterisation of thin AIN layers formed in microelectronics aluminium

Contributors:

Calvo-Barrio, L. (author) / Perez-Rodriguez, A. (author) / Romano-Rodriguez, A. (author) / Morante, J. R. (author) / Montserrat, J. (author)

Published in:

MATERIALS SCIENCE AND TECHNOLOGY -LONDON- ; 11 ; 1187-1190

Publication date:

1995-01-01

Size:

4 pages

ISSN:

0267-0836

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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