Intermediately Bound Excitons in Wurtzite Type Semiconductors Doped with Transition Metal Impurities: Fid-Bau Portal

Intermediately Bound Excitons in Wurtzite Type Semiconductors Doped with Transition Metal Impurities

Dahan, P. / Fleurov, V. / Kikoin, K. A.

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Intermediately Bound Excitons in Wurtzite Type Semiconductors Doped with Transition Metal Impurities

Dahan, P. / Fleurov, V. / Kikoin, K. A.

Intermediately Bound Excitons in Wurtzite Type Semiconductors Doped with Transition Metal Impurities

Dahan, P. / Fleurov, V. / Kikoin, K. A.

Access

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Check availability in my library

Order at Subito €

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Document information

Title:

Intermediately Bound Excitons in Wurtzite Type Semiconductors Doped with Transition Metal Impurities

Contributors:

Dahan, P. (author) / Fleurov, V. (author) / Kikoin, K. A. (author)

Published in:

MATERIALS SCIENCE FORUM ; 755-760

Publication date:

1995-01-01

Size:

6 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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