Impurity Behavior During Si Single Crystal Growth from the Melt: Fid-Bau Portal

Impurity Behavior During Si Single Crystal Growth from the Melt

Izumi, T. / Morita, H. / Fujiwara, T. / Fujiwara, H. / Inami, S.

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Impurity Behavior During Si Single Crystal Growth from the Melt

Izumi, T. / Morita, H. / Fujiwara, T. / Fujiwara, H. / Inami, S.

Impurity Behavior During Si Single Crystal Growth from the Melt

Izumi, T. / Morita, H. / Fujiwara, T. / Fujiwara, H. / Inami, S.

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Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Impurity Behavior During Si Single Crystal Growth from the Melt

Contributors:

Izumi, T. (author) / Morita, H. (author) / Fujiwara, T. (author) / Fujiwara, H. (author) / Inami, S. (author)

Published in:

MATERIALS SCIENCE FORUM ; 109-114

Publication date:

1995-01-01

Size:

6 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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