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    Arsenic-Antisite-Related Defects in GaAs Grown at Low Temperature: Characterization of Localized States

    New search for: Landman, J. I.
    New search for: Morgan, C. G.
    New search for: Schick, J. T.
    New search for: Kumar, A.
    New search for: Papoulias, P.
    New search for: Kramer, M. F.

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    Arsenic-Antisite-Related Defects in GaAs Grown at Low Temperature: Characterization of Localized States

    New search for: Landman, J. I.
    New search for: Morgan, C. G.
    New search for: Schick, J. T.
    New search for: Kumar, A.
    New search for: Papoulias, P.
    New search for: Kramer, M. F.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Arsenic-Antisite-Related Defects in GaAs Grown at Low Temperature: Characterization of Localized States

    New search for: Landman, J. I.
    New search for: Morgan, C. G.
    New search for: Schick, J. T.
    New search for: Kumar, A.
    New search for: Papoulias, P.
    New search for: Kramer, M. F.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

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    Document information
    Title:

    Arsenic-Antisite-Related Defects in GaAs Grown at Low Temperature: Characterization of Localized States

    Contributors:

    Landman, J. I. (author) / Morgan, C. G. (author) / Schick, J. T. (author) / Kumar, A. (author) / Papoulias, P. (author) / Kramer, M. F. (author)

    Published in:

    MATERIALS SCIENCE FORUM ; 249-254

    Publication date:

    1995-01-01

    Size:

    6 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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