A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
Electrical characterisation of epitaxial 6H-SiC by admittance spectroscopy
Electrical characterisation of epitaxial 6H-SiC by admittance spectroscopy
Electrical characterisation of epitaxial 6H-SiC by admittance spectroscopy
Raynaud, C. (author) / Ducroquet, F. (author) / Brounkov, P. N. (author) / Guillot, G. (author) / Porter, L. M. (author) / Davis, R. F. (author) / Jaussaud, C. (author) / Billon, T. (author)
MATERIALS SCIENCE AND TECHNOLOGY -LONDON- ; 12 ; 94-97
1996-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Admittance spectroscopy of GaAs/InGaP MQW structures
| British Library Online Contents | 2008
Study of silicon-organic interfaces by admittance spectroscopy
| British Library Online Contents | 2006
| TIBKAT | 1978